TRANSFER HEAD ASSEMBLY AND TRANSFER TOOL

专利摘要:
assembly of microdevice transfer head heater and method of transferring a microdevice. it is a method for transferring a microdevice and an array of microdevices that are revealed. a carrier substrate carrying a microdevice connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. by placing the microdevice in contact with the transfer head, the heat from the transfer head transfers to the bonding layer to at least partially melt the bonding layer. a tension applied to the transfer head creates a grip force that picks up the microdevice from the carrier substrate.
公开号:BR112014011849B1
申请号:R112014011849-3
申请日:2012-11-08
公开日:2020-12-15
发明作者:Andreas Bibl；John A. Higginson；Hung-Fai Stephen Law；Hsin-Hua Hu
申请人:Apple Inc；
IPC主号:

专利说明:

RELATED REQUESTS
[001] This application claims the priority benefit of US 61 / 561,706 Interim Patent Application filed on November 18, 2011, US 61 / 594,919 Interim Patent Application filed on February 3, 2012, Patent Application Provisional node US series 61 / 597,109 filed on February 9, 2012 and Provisional Patent Application on US series 61 / 597,658 filed on February 10, 2012, the entirety of which is disclosed in this document for reference. FIELD
[002] The present invention relates to microdevices. More particularly, the embodiments of the present invention relate to a method for transferring one or more microdevices to a receiving substrate with a microdevice transfer head. BACKGROUND INFORMATION
[003] Packaging and integration problems are one of the main obstacles for the commercialization of microdevices such as microcomputers of radio frequency microelectromechanical (MEMS) systems, light emitting diode (LED) display systems and MEMS or oscillators based in quartz.
[004] Traditional technologies for transferring devices include transferring through tablet connection from a transfer tablet to a receiving tablet. One such implementation is "direct printing" which involves a step of connecting an arrangement of devices from a transfer pad to a receiving pad, followed by removal of the transfer pad. Another such deployment is "transfer printing" which involves two steps of bonding / separation. In transfer printing, a transfer pad can retrieve an array of devices from a donor tablet and then connect the array of devices to a receiving pad, followed by removal of the transfer pad.
[005] Some variations of the printing process have been developed in which a device can be selectively connected and separated during the transfer process. In both traditional and variations of direct printing and transfer printing technologies, the transfer pad is separated from a device after connecting the device to the receiving pad. In addition, the entire transfer pad with the device arrangement is involved in the transfer process. SUMMARY OF THE INVENTION
[006] A microdevice transfer head and head arrangement, and a method for transferring one or more microdevices to a receiving substrate are disclosed. For example, the receiving substrate can be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs) or a substrate with metal redistribution lines.
[007] In one embodiment, a micro-device transfer head includes a base substrate, a table structure that includes side walls, at least one is an electrode formed on the table structure, and a dielectric layer that covers the electrode. For example, the transfer head of the microdevice may incorporate a monopolar or bipolar electrode structure. The table structure can be formed separately or integrally with the base substrate. The side walls can be conical and protrude away from the base substrate to a top surface of the table structure, with the electrode formed on the top surface. An electrode conductor can extend from the electrode in order to make contact with the wiring in the base substrate and connect the microdevice transfer head to the electronic devices in operation in an electrostatic grip device assembly. The electrode conductors can travel from the electrode on the top surface of the table structure and along a side wall of the table structure. The electrode conductor can alternatively move under the table structure and connect to a pathway by moving through the table structure to the electrode.
[008] The electrode and electrode conductors can be covered with a deposited dielectric layer. Suitable materials for the dielectric layer include, but are not limited to, aluminum oxide (Al2O3) and tantalum oxide (Ta2O5). As the dielectric layer is deposited, the electrode and electrode conductors can be formed from a material that can withstand high deposition temperatures, including high melting temperature metals such as platinum and refractory metals or refractory metal alloys such as tungsten titanium ( TiW).
[009] In one embodiment, a method for transferring a micro-device includes placing a transfer head on a micro-device connected to a carrier substrate. The microdevice is in contact with the transfer head and a voltage is applied to an electrode on the transfer head to create a grip pressure on the microdevice. The transfer head picks up the microdevice and then releases the microdevice on a receiving substrate. The voltage can be applied to the electrode before, during or after contacting the microdevice with the transfer head. The voltage can be a constant current voltage, or alternating current voltage. In one mode, an alternating current voltage is applied to a bipolar electrode structure. In one embodiment, an operation is additionally performed to create a phase change in a bonding layer that connects the microdevice to the carrier substrate before or during the retrieval of the microdevice.
[0010] In one embodiment, the bonding layer is heated to create a phase change from solid to liquid in the bonding layer before or during the retrieval of the microdevice. Depending on the operating conditions, a substantial portion of the bonding layer can be collected and transferred with the microdevice. A variety of operations can be performed to control the phase of the portion of the bonding layer to the pickup, transferring, contacting the receiving substrate and releasing the microdevice and portion of the binding layer on the receiving substrate. For example, the portion of the bonding layer that is collected with the microdevice can be kept in a liquid state upon contact with the receiving substrate and during the release operation on the receiving substrate. In another embodiment, the portion of the bonding layer is allowed to be cooled to a solid phase after being collected. For example, the portion of the bonding layer can be in a solid phase before or during contact with the receiving substrate and, again, fused to the liquid phase during the release operation. A variety of material and temperature phase cycles can be performed according to the modalities of the invention.
[0011] In one embodiment, a method for transferring an array of microdevices includes positioning an array of transfer heads over an array of microdevices. The array of microdevices comes into contact with the array of transfer heads, and a voltage is selectively applied to a portion of the array of transfer heads. Selectively applying a voltage may include applying a voltage to all transfer heads in the array, or to a portion that corresponds to less than all transfer heads in the array. The corresponding portion of the array of microdevices is then collected with the portion of the array of transfer heads, and the portion of the array of microdevices is selectively released onto at least one receiving substrate. In one embodiment, the arrangement of transfer heads can be rubbed into the arrangement of microdevices while making contact in order to remove any particle that may be present on the contact surface of any of the transfer heads or microdevices. In one embodiment, a phase change is created in an arrangement of locations laterally separate from the bonding layer that connects the array of microdevices to the carrier substrate before collecting the array of microdevices.
[0012] In one embodiment, a method for making a microdevice transfer head arrangement includes forming an arrangement of table structures on a base substrate, with each table structure including side walls. A separate electrode is formed on each table structure, and a dielectric layer is deposited on the table structure arrangement and each electrode. In one embodiment, the dielectric layer is deposited with atomic layer deposition (ALD), and can be hole-free for pins. The dielectric layer can include one or multiple dielectric layers. A shaped passivation layer can optionally be increased or deposited on the base substrate and the arrangement of table structures before the formation of the separate electrode on each corresponding table structure. In one embodiment, a grounded conductor plane is formed over the dielectric layer and surrounds each of the table structures.
[0013] In one embodiment, a method for transferring a micro device includes heating a carrier substrate that carries a micro device connected to a bonding layer to a temperature below a liquidus temperature of the bonding layer, and heating a head transfer temperature above the liquidus temperature of the bonding layer. The microdevice comes into contact with the transfer head and heat is transferred from the transfer head into the connection layer to at least partially melt the connection layer. A voltage is applied to the transfer head to create a grip pressure on the microdevice, and the microdevice is collected with the transfer head. The microdevice can then be brought into contact with and released onto a receiving substrate. The receiving substrate can be heated globally or locally to assist in the transfer process.
[0014] In one embodiment, a method for transferring an array of microdevices includes heating a substrate that carries an array of microdevices connected to a plurality of locations of a bonding layer to a temperature below a temperature of the bonding layer, and heating an arrangement of transfer heads at a temperature above the liquidus temperature of the bonding layer. The array of microdevices contacts the arrangement of transfer heads and heat is transferred from the arrangement of transfer heads to the plurality of locations in the bonding layer to at least partially melt portions of the plurality of locations in the bonding layer. A voltage is selectively applied to a portion of the transfer head arrangement, and a corresponding portion of the microdevice arrangement is collected with the portion of the transfer head arrangement. The microdevice array portion can then be brought into contact with and selectively released on at least one receiving substrate. The receiving substrate can be heated globally or locally to assist in the transfer process.
[0015] In one embodiment, the microdevice and arrangement of micro-devices are micro LED devices, each of which includes a microdiode pn and a metallization layer, with the metallization layer between the microdiode pn and a bonding layer formed on a substrate. When collecting the micro LED device and arrangement of micro LED devices, the collection of the microdioid p-n, the metallization layer and a portion of the bonding layer can be included. A shaped dielectric barrier layer can encompass side walls of the microdiode p-n and a bottom surface of the microdiode p- n. The shaped dielectric barrier layer can be cleaved below the bottom surface of the p-n microdiode. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 is a graphic illustration showing the pressure required to overcome the surface tension force to collect a microdevice of various dimensions according to one embodiment of the invention.
[0017] Figure 2 is a graphical illustration of the relationship between surface tension and increased clearance distance created during a recoil operation according to an embodiment of the invention.
[0018] Figure 3 is a graphical illustration of the relationship between viscous force pressures and increased clearance distance created during a recoil operation at various rates of traction according to an embodiment of the invention.
[0019] Figure 4 is a graphic illustration obtained through model analysis that shows the grip pressure exerted by a transfer head on a microdevice as the transfer head is removed from the microdevice according to an embodiment of the invention.
[0020] Figure 5 is a cross-sectional side view illustration of a monopolar microdevice transfer head according to an embodiment of the invention.
[0021] Figure 6 is an isometric view illustration of a monopolar microdevice transfer head according to an embodiment of the invention.
[0022] Figure 7 is a cross-sectional side view illustration of a bipolar microdevice transfer head according to an embodiment of the invention.
[0023] Figure 8 is an isometric view illustration of a bipolar microdevice transfer head according to an embodiment of the invention.
[0024] Figures 9-10 are top view illustrations of bipolar microdevice transfer heads according to an embodiment of the invention.
[0025] Figure 11 is an isometric view illustration of a bipolar microdevice transfer head that includes conductive pathways according to an embodiment of the invention.
[0026] Figure 12 is an isometric view illustration of a bipolar microdevice transfer head arrangement according to an embodiment of the invention.
[0027] Figure 13 is an isometric view illustration of a bipolar microdevice transfer head arrangement that includes a grounded conductor plane according to an embodiment of the invention.
[0028] Figure 14 is a cross-sectional side view illustration of a bipolar microdevice transfer head arrangement that includes a grounded conductor plane according to an embodiment of the invention.
[0029] Figure 15 is a flow chart illustrating a method of collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention.
[0030] Figure 16 is a schematic illustration of an alternating voltage applied through a bipolar electrode according to an embodiment of the invention.
[0031] Figure 17 is a schematic illustration of a constant voltage applied through a bipolar electrode according to an embodiment of the invention.
[0032] Figure 18 is a schematic illustration of a constant voltage applied to a monopolar electrode, according to an embodiment of the invention.
[0033] Figure 19 is a cross-sectional side view illustration of a variety of micro LED structures that includes contact opening less than the top surface of the p-n microdiode.
[0034] Figure 20 is a cross-sectional side view illustration of a variety of micro LED structures including contact openings wider than the top surface of the p-n microdiode.
[0035] Figure 21 is a cross-sectional side view illustration of a variety of LED microstructures that includes contact openings with the same width as the top surface of the p-n microdiode.
[0036] Figure 22 is a cross-sectional side view illustration of a bond layer absorbed by capillary effect according to an embodiment of the invention.
[0037] Figures 23A-23B include side and cross-sectional side view illustrations of a carrier chip and arrangement of micro LED devices according to the modalities of the invention.
[0038] Figure 24 is a flow chart illustrating a method for collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention.
[0039] Figure 25 is a flow chart illustrating a method for collecting and transferring an array of microdevices from a carrier substrate to at least one receiving substrate according to one embodiment of the invention.
[0040] Figure 26 is a cross-sectional side view illustration of an array of microdevice transfer heads in contact with an array of micro LED devices according to an embodiment of the invention.
[0041] Figure 27 is a cross-sectional side view illustration of an array of microdevice transfer heads in contact with an array of micro LED devices according to an embodiment of the invention.
[0042] Figure 28 is a cross-sectional side view illustration of an array of microdevice transfer heads that collect an array of micro LED devices according to an embodiment of the invention.
[0043] Figure 29 is a cross-sectional side view illustration of an array of microdevice transfer heads that collects a portion of an array of micro LED devices according to an embodiment of the invention.
[0044] Figure 30 is a cross-sectional side view illustration of an array of microdevice transfer heads with an array of micro LED devices positioned on a receiving substrate according to an embodiment of the invention.
[0045] Figure 31 is a side view illustration in cross section of a microdevice selectively released on a receiving substrate according to an embodiment of the invention.
[0046] Figure 32 is a flow chart illustrating a method for collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention.
[0047] Figure 33A is a cross-sectional side view illustration of a location at least partially fused to a laterally continuous bonding layer, according to an embodiment of the invention.
[0048] Figure 33B is a side view illustration in cross section of at least partially fused locations of a laterally continuous bonding layer, according to an embodiment of the invention.
[0049] Figure 34A is a side view illustration in cross section of a location partially separated at least partially fused from a connection layer according to an embodiment of the invention.
[0050] Figure 34B is a cross-sectional side view illustration of locations laterally separated at least partially fused from a connection layer according to an embodiment of the invention.
[0051] Figure 35A is a cross-sectional side view illustration of a laterally separated at least partially fused location of a connection layer at a post according to an embodiment of the invention.
[0052] Figure 35B is a side view illustration in cross section of locations separated laterally at least partially fused from a connection layer in posts according to an embodiment of the invention.
[0053] Figure 36 is a flow chart illustrating a method for collecting and transferring a microdevice arrangement from a carrier substrate to at least one receiving substrate, according to an embodiment of the invention.
[0054] Figure 37 is a cross-sectional side view illustration of an array of microdevice transfer heads in contact with an array of micro LED devices according to an embodiment of the invention.
[0055] Figure 38 is a cross-sectional side view illustration of an array of microdevice transfer heads that collect an array of micro LED devices according to an embodiment of the invention.
[0056] Figure 39 is a side view illustration of an array of microdevice transfer heads with an array of micro LED devices positioned on a receiving substrate according to an embodiment of the invention.
[0057] Figure 40 is a side view illustration of an arrangement of micro LED devices selectively released on a receiving substrate according to an embodiment of the invention. DETAILED DESCRIPTION OF THE INVENTION
[0058] The modalities of the present invention describe a microdevice transfer head and head arrangement, and method for transferring a microdevice and a microdevice arrangement to a receiving substrate. For example, the receiving substrate can be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or integrated circuits (ICs) or a substrate with metal redistribution lines. In some embodiments, the micro-devices and micro-device arrangement described in this document can be any of the LED micro-device structures illustrated in Figures 19-21, and those described in Provisional Application no. 61 / 561.706 and Provisional Order no. 61 / 594,919 related. Although some modalities of the present invention are described with specific attention to micro LEDs, it should be noted that the modalities of the invention are not limited and that certain modalities can also be applicable to other microdevices such as diodes, transistors, ICs and MEMS.
[0059] In several modalities, the description is made with reference to the Figures. However, certain modalities can be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the description that follows, numerous specific details are established, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present invention. In other cases, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order not to unnecessarily obscure the present invention. Reference throughout this specification to "a modality", "a modality" or the like means that a particular feature, structure, configuration, or features described in connection with the modality are included in at least one embodiment of the invention. Thus, the appearances of the expression "in a modality", "a modality" or the like in various parts throughout this specification are not necessarily referring to the same modality of the invention. In addition, particular resources, structures, configurations or characteristics can be combined in any suitable way in one or more modalities.
[0060] The terms "about", "to", "between" and "in", as used in this document, can refer to a relative position of a layer in relation to other layers. A layer "on" or "on" another layer or linked "to" another layer can be directly in contact with the other layer or can have one or more intervening layers. A layer "between" layers can be directly in contact with the layers or it can have one or more intervening layers.
[0061] The terms "micro" device or "micro" LED structure as used in this document may refer to the descriptive size of certain devices or structures according to the modalities of the invention. As used in this document, the terms "micro" devices or structures are intended to refer to a scale of 1 to 100 μm. However, it should be noted that the modalities of the present invention are not necessarily limited, and that certain aspects of the modalities may be applicable to larger and possibly smaller size scales.
[0062] In one aspect, the embodiments of the invention describe a method for mass transfer of a prefabricated microdevice array with a transfer head array. For example, prefabricated microdevices may have specific functionality such as, but not limited to, an LED for light emission, silicon IC for logic and memory, and gallium arsenide (GaAs) circuits for radio frequency (RF) communications . In some embodiments, arrangements of LED micro devices that are suspended for retraction are described as having a 10 μm by 10 μm pitch, or 5 μm by 5 μm pitch. At these densities, a 15.24 cm (6 inch) substrate, for example, can accommodate approximately 165 million micro LED devices with a 10 μm by 10 μm step or approximately 660 million micro LED devices with a 5 μm by 5 μm. A transfer tool that includes an array of transfer heads that matches a multiple integer step of the corresponding array of micro LED devices can be used to collect and transfer the array of micro LED devices to a receiving substrate . In this way, it is possible to integrate and mount micro LED devices in heterogeneously integrated systems, including substrates of any size in the micro display range for wide area displays, and at high transfer rates. For example, a 1 cm by 1 cm array of microdevice transfer heads can collect and transfer more than 100,000 microdevices, with larger arrays of microdevice transfer heads having the ability to transfer more microdevices. Each transfer head in the transfer head arrangement can also be independently controllable, which allows selective collection and release of microdevices.
[0063] In one aspect, without being limited to a particular theory, the modalities of the invention describe microdevice transfer heads and head arrangements that operate according to principles of electrostatic grip devices, with the use of charge attraction to collect microdevices. In accordance with embodiments of the present invention, a shrunken voltage is applied to a microdevice transfer head in order to generate a grip force on a microdevice and to retract the microdevice. The grip force is proportional to the area of the loaded plate, so it is calculated as a pressure. According to ideal electrostatic theory, a non-conductive dielectric layer between a monopolar electrode and a conductive substrate yields a Pascal (Pa) grip pressure in equation (1) of: P = [So / 2] [V Sr / d] 2 (1)
[0064] where So = 8.85.10-12, V = substrate voltage of the electrode in volts (V), Sr = dielectric constant and d = dielectric thickness in meters (m). With a bipolar clamping device using two grip electrodes, the voltage (V) in the above equation is half the voltage between electrodes A and B, [VA-VB] / 2. The substrate potential is centered on the average potential , [VA = VB] / 2. This average is usually zero with VA = [-VB].
[0065] In another aspect, the modalities of the invention describe a bonding layer that can hold a microdevice on a carrier substrate during certain handling and processing operations, and by means of a change of phase provides a means in which the microdevice can be retained it is also still readily released during a pickup operation. For example, the bonding layer can be remelted or refluxable so that the bonding layer undergoes a phase change from solid to liquid before or during the pickup operation. In the liquid state, the bonding layer can hold the microdevice in place on a carrier substrate while also providing a medium from which the microdevice is readily released. Without limiting itself to a particular theory, when determining the pickup pressure that is required to collect the microdevice from the carrier substrate, the pickup pressure must exceed the forces that hold the microdevice to the carrier substrate, which may include, but without limitation, surface tension forces, capillary forces, viscous effects, elastic reintegration forces, van-der-Waals forces, static friction and gravity.
[0066] According to the modalities of the invention, when the dimensions of a microdevice are reduced below a certain range, the surface tension forces of the liquid bonding layer that hold the microdevice to the carrier substrate can become dominant over other forces that hold the microdevice. Figure 1 is a graphic illustration of a modality obtained through model analysis that shows the pressure required to overcome the surface tension force to pick up a microdevice of various dimensions, assuming a layer of liquid (In) Indian bond with a voltage surface area of 560 mN / m at melting temperature 156.7 ° C. For example, referring to Figure 1, an exemplary 10 μm by 10 μm width microdevice is retained on a carrier substrate with a surface tension pressure of approximately 222.91 kPa (2.2 atmospheres (atm)) with an indium bonding layer having a net surface tension of 560 mN / m at its melting temperature of 156.7 ° C. This is significantly higher than the pressure due to gravity, which is approximately 1.82 x 10-4kPa (1.8 x 10-6atm) for an example piece 10 μm x 10 μm wide x 3 μm high nitride of gallium (GaN).
[0067] Surface tension pressures and viscous effects can also be dynamic during the recoil operation. Figure 2 is a graphic illustration of a modality obtained through model analysis that shows the relationship of surface tension and increased clearance distance created during the retraction operation of a 10 μm by 10 μm width microdevice held in an example carrier substrate with a fused indium (In) bonding layer. The clearance distance along the x-axis referred to in Figure 2 is the distance between the bottom of the microdevice and the carrier substrate, and starts at 2 μm which corresponds to an unfused thickness of the In bonding layer. As illustrated in Figure 2, a surface tension pressure of 222.91 kPa (2.2 atm) along the y-axis is initially overcome by the grip pressure at the beginning of the recoil operation. As the micro-device is then lifted from the carrier substrate, the surface tension drops quickly, with pressure leveling as the micro-device is additionally lifted away from the carrier substrate.
[0068] Figure 3 is a graphic illustration of a modality obtained through model analysis that shows the ratio of viscous force pressures (atm) and increase in clearance distance (μm) created during a retraction operation at various rates of traction for an exemplary 10 μm by 10 μm microdevice retained on a carrier substrate with a fused indium (In) bonding layer. The clearance distance referred to in Figure 3 is the distance between the bottom of the microdevice and the carrier substrate, and starts at 2 μm which corresponds to an unfused thickness of the In bonding layer. As illustrated, the viscous force pressures are more evident during faster lifting speeds such as 1,000 mm / s than for slower lifting speeds such as 0.1 mm / s. In addition, the pressures generated from the viscous effects using the exemplary lifting speeds illustrated in Figure 3 are significantly lower than the surface tension pressure generated and illustrated in Figure 2 which suggests that the surface tension pressure is the dominant pressure that must be overcome by the grip pressure during the retraction operation.
[0069] If an air gap of size (g) is present between the dielectric layer of the microdevice transfer head and a conductive top surface of the microdevice, then the grip pressure in equation (2) is: P = [ So / 2] [V Sr / (d + Sr g)] 2 - (2)
[0070] It is contemplated that an air gap may be present due to a variety of sources which include, but are not limited to, particulate contamination, deformation, and misalignment of its transfer head or microdevice surface, or the presence of a additional layer on the transfer head or micro-device, such as a lip of a dielectric barrier layer formed around the top conductive surface of a microdispositive. In one embodiment, a lip of a shaped dielectric barrier layer can create both an air gap in which a contact opening is formed and increases the effective thickness of the transfer head housing in which the lip is present.
[0071] As seen from equations (1) and (2) above, lower voltages can be used where no air gap is present between the microdevice and microdevice transfer head to be collected. However, when an air gap is present, it has a series capacitance in which the air capacitance can compete with the dielectric layer capacitance. In order to compensate for the possibility of an air capacitance between any of a microdevice transfer head arrangement in a corresponding array of microdevices to be collected, a higher operating voltage, a greater dielectric constant for the dielectric material, or material Thinner dielectric can be used to maximize the electric field. However, the use of a larger electric field has limitations due to possible electrical breakage and bending.
[0072] Figure 4 is a graphic illustration of a modality obtained by modeling analysis that shows the grip pressure exerted by a transfer head on a microdevice as the transfer head is removed from the top conductive surface of the microdevice , which corresponds to an increasing size of air gap. The different lines correspond to different Ta2O5 dielectric layer thicknesses between 0.5 μm and 2.0 μm in the transfer head, with the electric field being kept constant. As illustrated, no appreciable effect on the grip pressure is observed under these conditions below air gap sizes of approximately 1 nm (0.001 μm), and still as high as 10 nm (0.01 μm) for some conditions. However, it is appreciated that the tolerable air gap can be increased or decreased by changing conditions. Thus, according to some embodiments of the invention, a certain amount of air gap tolerance is possible during the recoil operation and actual contact with the microdevice transfer head and the top conductive surface of the micro-device may not be needed.
[0073] Now assuming that the handle pressure required to retrieve the microdevice from the carrier substrate has exceeded the sum of pressures that the microdevice retains on the carrier substrate (as well as any pressure reduction due to air gap) is possible to derive the inter -operation voltage relationship, dielectric constant and dielectric thickness of the dielectric material in the microdevice transfer head, solving the handle pressure equations. For the sake of clarity, assuming the air gap distance is zero, for a monopolar electrode, it becomes: sqrt (P * 2 / So) = V Sr / d (3)
[0074] Exemplary ranges of calculated values for dielectric thickness are given in Table 1 for desired pickup pressures of 202.65 kPa (2 atm) and 2,026.5 kPa (20 atm) for die materials Al2O3 and Ta2O5 between voltages operating between 25 V and 300 V in order to illustrate the interdependence of handle pressure, voltage, dielectric constant and dielectric thickness according to an embodiment of the invention. The dielectric constants provided are close, and it is understood that the values may vary depending on the form of formation. Table 1.

[0075] Since the grip pressure is proportional to the inverse square of the dielectric thickness, the dielectric thicknesses calculated in Table 1 represent the maximum thicknesses that can be formed to reach the required grip pressure with the adjusted operating voltage. Thicknesses lower than those provided in Table 1 may result in higher grip pressures at the set operating voltage, however lower thicknesses increase the electric field applied through the dielectric layer which requires the dielectric material to have sufficient dielectric strength to overcome the electric field applied without short circuit. It is appreciated that the grip pressure, voltage, dielectric constant and thickness values provided in Table 1 are exemplary in nature, and provided in order to provide a basis for working microdevice transfer head bands according to the modalities of the invention. The relationship between the grip pressure, voltage, dielectric constant and dielectric thickness values provided in Table 1 has been illustrated according to the ideal electrostatic theory, and the modalities of the invention are not limited by this.
[0076] Now referring to Figure 5, a side view illustration is provided of a monopolar microdevice transfer head and head arrangement according to an embodiment of the invention. As shown, each monopolar device transfer head 100 may include a base substrate 102, a table structure 104 including a top surface 108 and side walls 106, an optional passivation layer 110 formed on the table structure 104 and which includes a top surface 109 and side walls 107, an electrode 116 formed on the table frame 104 (and optional passivation layer 110) and a dielectric layer 120 with a top surface 121 covering the electrode 116. The base substrate 102 can be formed from a variety of materials such as silicon, ceramics and polymers that are capable of providing structural support. In one embodiment, the base substrate has a conductivity between 103 and 1018ohm-cm. The base substrate 102 may additionally include wiring (not shown) to connect the microdevice transfer head 100 to the operating electronics of an electrostatic handle assembly.
[0077] Table structure 104 can be formed using appropriate processing techniques, and it can be formed from the same or different material than base substrate 102. In one embodiment, table structure 104 is integrally formed with the base substrate 102, for example, with the use of lithographic pattern and carving, or casting techniques. In one embodiment, anisotropic notching techniques can be used to form tapered sidewalls 106 for table structure 104. In another embodiment, table structure 104 can be deposited or grown, and patterned on top of the base substrate 102. In one embodiment, table structure 104 is a standardized oxide layer, such as silicon dioxide, formed on a semiconductor substrate, such as silicon.
[0078] In one aspect, table structures 104 generate a profile that protrudes away from the base substrate in order to provide a localized point of contact for picking up a specific microdevice during a picking operation. In one embodiment, table structures 104 have a height of approximately 1 μm to 5 μm, or more specific and approximately 2 μm. Specific dimensions of table structures 104 may depend on the specific dimensions of the microdevices to be collected, as well as the thickness of any layers formed on the table structures. In one embodiment, the height, width, and planarity of the arrangement of table structures 104 on the base substrate 102 are uniform across the base substrate so that each microdevice transfer head 100 has the ability to make contact with each micro - corresponding device during the retraction operation. In one embodiment, the width across the top surface 121 of each microdevice transfer head is slightly greater, approximately the same, or less than the width of the top surface of each microdevice in the corresponding microdevice arrangement so that a head do not inadvertently make contact with a microdevice adjacent to the corresponding microdevice intended during the retraction operation. As described in more detail below, since additional layers 110, 112, 120 can be formed on table structure 104, the width of the table structure can take into account the thickness of the overlying layers so that the width across the top surface 121 each microdevice transfer head is slightly larger, approximately the same, or less than the width of the top surface of each microdevice in the corresponding microdevice arrangement.
[0079] Still referring to Figure 5, the table structure 104 has a top surface 108, which can be flat, and the side walls 106. In one embodiment, the side walls 106 can be tapered up to 10 degrees, by example. The tapering of the side walls 106 can be beneficial in forming the electrodes 116 and electrode conductors 114 as further described below. A passivation layer 110 can then optionally be deposited or grown on the base substrate 102 and in the arrangement of table structures 104. The passivation layer 110 can be deposited by a variety of suitable techniques such as chemical vapor deposition (CVD), spraying, or atomic layer deposit (ALD). In one embodiment, the passivation layer 110 can be oxide with a thickness of 0.5 μm - 2.0 μm such as, but without limitation, silicon oxide (SiO2), aluminum oxide (Al2O3) or tantalum oxide ( Ta2O5).
[0080] A conductive layer 112 can then be deposited on the table frame arrangement 104 and on the optional passivation layer 110, and standardized to form electrodes 116 and electrode conductors 114. For example, a lifting technique can be used to form electrodes 116 and electrode conductors 114 in which a resistance layer is deposited and patterned on the substrate, followed by depositing a metal layer, and raising the resistance and portion of the metal layer in the resistance leaving the desired pattern. Alternatively, depositing the metal layer followed by patterning and notching can be performed to achieve the desired pattern. The electrode conductors 114 can be run from the electrode 116 on the top surface 108 of a table structure 104 (and top surface 109 of the optional passivation layer 110) and along a side wall 106 of the table structure 104 (and along a side wall 107 of the optional passivation layer 110). The conductive layer 112 used to form the electrodes 116 and electrode conductors 114 can be a single layer or multiple layers. A variety of conductive materials including metals, metal alloys, refractory metals, and refractory metal alloys can be employed to form conductive layer 112. In one embodiment, conductive layer 112 has a thickness of up to 5,000 angstroms (0.5 μm). In one embodiment, the conductive layer 112 includes a high melting metal such as platinum or a refractory metal or refractory metal alloy. For example, the conductive layer may include platinum, titanium, vanadium, chromium, zirconium, niobium, molybdenum, ruthenium, rhodium, hafnium, tannant, tungsten, rhenium, osmium, iridium and alloys thereof. Refractory metals and refractory metal alloys generally exhibit greater resistance to heat and wear than other metals. In one embodiment, conductive layer 112 is a refractory metal alloy of titanium tungsten (TiW) approximately 500 angstrom (0.05 μm) thick.
[0081] A dielectric layer 120 is then deposited on the electrodes of the 116 and other layers exposed on the base substrate 102. In one embodiment, the dielectric layer 120 has an adequate and constant dielectric thickness to achieve the required pick-up pressure of the transfer head microdevice 100, and sufficient electrical resistance to not break the operating voltage. The dielectric layer can be a single layer or multiple layers. In one embodiment, the dielectric layer is 0.5 μm - 2.0 μm thick, although the thickness may be more or less depending on the specific topography of the transfer head 100 and underlying table structure 104. Suitable dielectric materials however, they may include, without limitation, aluminum oxide (Al2O3) and tannin oxide (Ta2O5). Referring to Table 1 above, the modalities of Al2O3 dielectric layers with applied electric fields (determined by dividing the voltage by the dielectric thickness) from 22 V / μm to 71 V / μm and Ta2O5 dielectric layers with applied 9 V electric fields / μm at 28 V / μm were provided. According to the modalities of the invention, the dielectric layer 120 has a dielectric resistance greater than the electric field applied in order to avoid shorting the transfer head during operation. The electric layer 120 can be deposited by a variety of suitable techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) such as spraying. The dielectric layer 120 can be additionally annealed following the deposit. In one embodiment, the dielectric layer 120 has a dielectric strength of at least 400 V / μm. Such a high dielectric strength may allow the use of a thinner dielectric layer than the calculated thicknesses provided in the example table 1. Techniques such as ALD can be used to deposit uniform, shaped, dense, and / or free dielectric layers. pin hole with satisfactory dielectric strength. Multiple layers can also be used to achieve such a pinhole free dielectric layer 120. Multiple layers of different dielectric materials can also be used to form the dielectric layer 120. In one embodiment, the underlying conductive layer 112 includes platinum or a refractory metal or refractory metal alloy that has a melting temperature above the deposit temperature of the dielectric layer material (s) so as not to be a limiting factor in the selection of the deposit temperature of the dielectric layer. In one embodiment, following the deposition of dielectric layer 120 a thin coating (not shown) can be formed on dielectric layer 120 to provide a specific coefficient of static friction to add side friction and prevent microdevices from being hit on the transfer head during collection operation. In such an embodiment, the additional thin coating replaces the top surface 121 as the contact surface, and that surface retains the dimensional arrangement requirements described herein. In addition, the additional coating can affect the dielectric properties of the microdevice transfer head which can affect the operability of the microdevice transfer head. In one embodiment, the additional coating thickness may be minimal (for example, below 10 nm) in order to have little or no appreciable effect on the grip pressure.
[0082] Figure 6 is an approximate isometric view of electrode 116 and conductor electrode 114 formed in an optional passivation layer 110 that covers a table structure 104. For the sake of clarity, the overlying dielectric layer 120 is not illustrated , and the optional passivation layer 110 and table structure 104 are illustrated as a unique table / passivation layer structure 104/110. In an exemplary embodiment, in which both the passivation layer 110 and the dielectric layer 120 are 0.5 μm thick, the top surface 108/109 of the 104/110 passivation layer / layer structure on which the electrode 116 is formed is approximately 7 μm x 7 μm in order to reach a top surface of 8 μm x 8 μm from the transfer head 100. According to one embodiment, electrode 116 covers the maximum amount of surface area of the surface top level 108/109 of the 104/110 passivation mesh / layer structure as much as possible while remaining within the standardization tolerances. Minimizing the amount of free space increases capacitance, and the resulting grip pressure that can be achieved by the microdisplay transfer head. Although a certain amount of free space is illustrated on the top surface 108/109 of the table / passivation layer structure 104/110 in Figure 6, electrode 116 can cover the entire top surface 108/109. Electrode 116 can also be slightly larger than the top surface 108/109, and extend partially below the side walls 106/107 of the 104/110 passivation layer / layer structure to ensure complete coverage of the top surface 108/109. It is appreciated that the table arrangement can have a variety of different steps, and these embodiments of the invention are not limited to the exemplary 7 μm x 7 μm top surface of the 104/110 passivation table / layer structure in a 10 step μm.
[0083] Now referring to Figure 7, a side view illustration of a bipolar microdevice transfer head 100 and head arrangement according to an embodiment of the invention is provided. As shown, the bipolar device transfer head 100 can include a base substrate 102, a table structure 104 that includes a top surface 108 and side walls 106, passivation layer 110 that includes a top surface 109 and side walls 107, a pair of electrodes 116A, 116B and electrode conductors 114A, 114B formed in the table structure 104, optional passivation layer 110 and a dielectric layer 120 covering the pair of electrodes 116A, 116B.
[0084] Figure 8 is an approximate isometric view of electrodes 116A, 116B and electrode conductors 114A, 114B formed in an optional passivation layer 110 that covers a table structure 104. For the sake of clarity, the overlying dielectric layer 120 does not is illustrated, and the optional passivation layer 110 and table structure 104 are illustrated as a single passivation table / layer structure 104/110. Figure 8 differs slightly from Figure 7 in the fact that the electrode conductors 114A, 114B are illustrated running along a single side wall instead of on opposite side walls of the 104/110 passivation table / layer structure. The electrode conductors 114A, 114B can run through any suitable sidewall according to the modalities of the invention. In an exemplary embodiment, where the top surface 108/109 of the table structure / passivation layer 104/110 is approximately 7 μm x 7 μm corresponding to a table arrangement with a 10 μm pitch, the electrodes can cover the maximum amount of the surface area of the top surface 108/109 of the table / passivation layer structure 104/110 as much as possible while still providing the separation between the electrodes 116A, 116B. The minimum amount of separation distance can be balanced by considerations to maximize the surface area, by avoiding overlapping electrode electric fields. For example, electrodes 116A, 116B can be separated by 0.5 μm or less, and the minimum separation distance can be limited by the height of the electrodes. In one embodiment, the electrodes are slightly larger than the top surface 108/109 in one direction, and extend partly down the side walls of the 104/110 passivation table / layer structure to ensure maximum coverage of the surface. top 108/109. It is appreciated that the table arrangement can have a variety of different steps, and these embodiments of the invention are not limited to the 7 μm x 7 μm top surface exemplifying the 104/110 passivation table / layer structure in one step 10 μm.
[0085] Referring now to Figures 9 and 10, top view illustrations of electrodes 116A, 116B of a bipolar microdevice transfer head are provided according to the modalities of the invention. Until now, table structure 104 has been described as a single table structure as shown in Figure 9. However, the modalities of the invention are not so limited. In the embodiment illustrated in Figure 10, each electrode 116 is formed in a separate table structure 104A, 104B separated by a ditch 105. An optional passivation layer 110 (not shown) can cover both table structure 104A and the structure of table 104B.
[0086] Now referring to Figure 11, an isometric view illustration of an alternative electrode conductor configuration is provided according to an embodiment of the invention. In such an embodiment, electrode conductors 114A, 114B run under a portion of table structure 104, and conductive pathways 117A, 117B run through table structure 104 (and optional passivation layer 110 not shown) that connects the electrodes 116A, 116B to the respective electrode conductors 114A, 114B. In such an embodiment, electrode conductors 114A, 114B can be formed prior to forming table structure 104, and can be formed from the same conductive material or different conductive material from electrode conductors 114A, 114B and electrodes 116A, 116B. Although pathways 117A, 117B are illustrated in relation to a bipolar electrode structure in Figure 11, it is appreciated that the aforementioned path or pathways can also be integrated into monopolar electrode structures.
[0087] Referring now to Figures 12 to 14, one embodiment of the invention is illustrated in which a conductive ground plane is formed in the dielectric layer and which surrounds the arrangement of table structures. Figure 12 is an isometric view illustration of a microdevice transfer head arrangement 100 with a bipolar electrode configuration as previously described in relation to Figure 8. For clarity, the optional underlying passivation layer and the overlying dielectric layer have not been illustrated. Referring now to Figures 13 and 14, a conductive ground plane 130 is formed in the dielectric layer 120 and which surrounds the arrangement of table structures 104. The presence of ground plane 130 can assist in preventing arching between the transfer heads 100, particularly when applying high voltages. The ground plane 130 can be formed of a conductive material which can be the same conductive material used to form the electrodes, or channels or different from it. The terrestrial plane 130 can also be formed of a conductive material that has a lower melting temperature than the conductive material used to form the electrodes since it is not necessary to deposit a dielectric layer of comparable quality (for example, dielectric strength) to the layer dielectric 120 after the formation of the terrestrial plane 130.
[0088] Figure 15 is a flow chart illustrating a method of collecting and transferring a microdevice from a carrier substrate to a substrate receiver according to an embodiment of the invention. In operation 1510, a transfer head is positioned on a microdevice connected to a carrier substrate. The transfer head may comprise a table structure, an electrode on the table structure, and a dielectric layer that covers the electrode as described in the above embodiments. In this way, the transfer head can have a monopolar or bipolar electrode configuration, as well as any structural variations as described in the above modalities. The microdevice is then brought into contact with the transfer head in operation 1520. In one embodiment, the microdevice is brought into contact with the electrical layer 120 of the transfer head. In an alternative embodiment, the transfer head is positioned on the microdevice with an adequate air gap that separates them, which does not significantly affect the handle pressure, for example, 1 nm (0.001 μm) or 10 nm (0 , 01 μm). In operation 1530, a voltage is applied to the electrode to create a grip pressure on the microdevice, and the microdevice is collected with the transfer head in operation 1540. The microdevice is then released into a substrate receiver in operation 1550.
[0089] Although operations 1510 - 1550 have been illustrated sequentially in Figure 15, it is appreciated that modalities are not so limited and that additional operations can be performed and certain operations can be performed in a different sequence. For example, in one embodiment, after making the microdevice come into contact with the transfer head, the transfer head is rubbed across a top surface of the microdevice in order to dislodge any particles that may be present on the transfer surface. contact of both the transfer head and the microdevice. In another embodiment, an operation is performed to create a phase change in the bonding layer that connects the microdevice to the carrier substrate before or during the retrieval of the microdevice. If a portion of the connection layer is collected with the microdevice, additional operations can be performed to control the phase of the connection layer portion during subsequent processing.
[0090] The 1530 operation of applying voltage to the electrode to create a grip pressure on the microdevice can be performed in several orders. For example, the voltage can be applied before contact of the microdevice with the transfer head, during contact of the microdevice with the transfer head, or after contact of the microdevice with the transfer head. The voltage can also be applied before, during, or after creating the phase change in the bonding layer.
[0091] Figure 16 is a schematic illustration of an alternating voltage applied through a bipolar electrode with the transfer head in contact with a microdevice according to an embodiment of the invention. As illustrated, a separate alternating current (AC) voltage source can be applied to each electrode conductor 114A, 114B with an alternating voltage applied across the pair of electrodes 116A, 116B so that at a particular point in time when a negative voltage is applied to electrode 116A, positive voltage is applied to electrode 116B, and vice versa. The microdevice release from the transfer head can be completed with a variety of methods that include turning off the voltage sources, reducing the voltage across the pair of electrodes, changing an AC voltage waveform, and grounding the voltage source. Figure 17 is a schematic illustration of a constant voltage applied to a bipolar electrode according to an embodiment of the invention. In the particular embodiment illustrated, a negative voltage is applied to electrode 116A while a positive voltage is applied to electrode 116B. Figure 18 is a schematic illustration of a constant voltage applied to a monopolar electrode according to an embodiment of the invention. Once the transfer head collects the microdevice shown in Figure 18, the amount of time the transfer head can hold the micro device can be a function of the discharge rate of the electrical layer, since only a single voltage is applied to electrode 116. The microdevice release from the transfer head shown in Figure 14 can be completed by turning off the voltage source, grounding the voltage source, or reversing the polarity of the constant voltage.
[0092] In the particular embodiments illustrated in Figures 16 to 18, microdevices 200 are those illustrated in Figure 19, Example 19O. Although the microdevices shown in Figures 1618 can be of any of the micro LED device structures shown in Figures 19 -21, and those described in related Provisional Application No. U.S. 61 / 561,706 and related Provisional Application No. U.S. 61 / 594,919. For example, a micro LED device 200 may include a microdiode pn 235, 250 and a metallization layer 220, with the metallization layer between microdiode pn 235, 250 and a bonding layer 210 formed on a substrate 201. In one embodiment, the pn 250 microdiode includes a top n additivated layer 214, one or more layers of quantum well 216, and a lower n additivated layer 218. pn microdiodes can be manufactured with straight side walls or tapered side walls . In certain embodiments, the microdiodes p-n 250 have tapered side walls facing outwards 253 (from top to bottom). In certain embodiments, microdiodes p-n 235 have tapered side walls facing inward 253 (top to bottom). The metallization layer 220 can include one or more layers. For example, metallization layer 220 can include an electrode layer and a barrier layer between the electrode layer and the bonding layer. The p-n microdiode and metallization layer may each have a top surface, a bottom surface and side walls. In one embodiment, the bottom surface 251 of microdiode p-n 250 is wider than the top surface 252 of microdiode p-n, and the side walls 253 are tapered out from top to bottom. The top surface of the p-n 235 microdiode can be wider than the bottom surface of the p-n diode, or approximately the same width. In one embodiment, the bottom surface 251 of the microdiode pn 250 is wider than the top surface 221 of the metallization layer 220. The bottom surface of the microdiode pn can also be wider than the top surface of the metallization layer, or approximately the same width as the top surface of the metallization layer.
[0093] A shaped dielectric barrier layer 260 can optionally be formed on microdiode p-n 235, 250 and other exposed surfaces. The shaped dielectric barrier layer 260 can be thinner than the microdiode pn 235, 250, the metallization layer 220 and optionally the bonding layer 210 so that the shaped dielectric barrier layer 260 forms an outline of the topography in the which it is formed. In one embodiment, the micro-diode pn 235, 250 is several microns thick, such as 3 μm, the metallization layer 220 is 0.1 μm - 2 μm thick, and the connection layer 210 is 0, 1 μm - 2 μm thick. In one embodiment, the shaped dielectric barrier layer 260 is aluminum oxide (Al2O3) approximately 50 to 600 angstroms thick. The shaped dielectric barrier layer 260 can be deposited by a variety of suitable techniques such as, but without limitation, atomic layer deposition (ALD). The shaped dielectric barrier layer 260 can protect against charge arching between adjacent p-n microdiodes during the recollection process, and thus protect adjacent p-n microdiodes against adhesion to each other during the recollection process. The shaped dielectric barrier layer 260 can also protect side walls 253, quantum well layer 216 and bottom surface 251, from p-n microdiodes from contamination that could affect the integrity of p-n microdiodes. For example, the shaped dielectric barrier layer 260 can act as a physical barrier to absorb capillary materials 210 above the side walls and quantum layer 216 of the pn 250 microdiodes by capillary effect. The shaped dielectric barrier layer 260 can also isolate pn 250 microdiodes once placed in a substrate receiver. In one embodiment, the shaped dielectric barrier layer 260 occupies the side walls 253 of the p-n microdiode, and can cover a quantum well layer 216 in the p-n microdiode. The shaped barreirielectric layer can also partially occupy the bottom surface 251 of the microdiode pn, as well as occupy the side walls of the metallization layer 220. In some embodiments, the shaped dielectric barrier layer also occupies the side walls of a bonding layer 210 standardized. A contact opening 262 can be formed in the shaped dielectric barrier layer 260 that exposes the top surface 252 of the microdiode p-n. In one embodiment, the shaped dielectric barrier layer 260 is formed from the same material as the dielectric layer 120 of the connection head. Depending on the particular micro LED device structure, the shaped dielectric barrier layer 260 can also occupy the side walls of the connecting layer 210, as well as the carrier substrate and posts, if present.
[0094] Referring to Figure 19, the contact opening 262 may be less than the top surface 252 of the microdiode pn and the shaped dielectric barrier layer 260 forms a lip around the edges of the top surface 252 of the microdiode pn. Referring to Figure 20, the contact opening 262 may be slightly wider in width than the top surface of the p-n microdiode. In such an embodiment, the contact opening 262 exposes the top surface 252 of the microdiode pn and an upper portion of the side walls 253 of the microdiode pn, while the shaped dielectric barrier layer 260 covers and insulates the layer (s) of quantum well 216. Referring to Figure 21, the shaped dielectric layer 260 can be approximately the same width as the top surface of the microdiode pn. The shaped dielectric layer 260 can also occupy along a bottom surface 251 of the p-n microdiodes shown in Figures 19 to 21.
[0095] The connection layer 210 can be formed from a material that can keep the micro LED device 200 on the carrier substrate 201 during certain processing and handling operations, and when undergoing a phase change, provide a means in which the micro LED device 200 can be retained while also being readily releasable during a retraction operation. For example, the bonding layer can be refillable or refluxable so that the bonding layer undergoes a phase change from solid to liquid before or during the take-up operation. In the liquid state, the bonding layer can hold the micro LED device in place on the carrier substrate while also providing a medium from which the micro LED device 200 is also releasable. In one embodiment, the bonding layer 210 has a liquid-temperature or melting temperature below approximately 350 ° C, or more specifically below approximately 200 ° C. At such temperatures, the bonding layer can undergo a phase change without substantially affecting the other components of the micro LED device. For example, the bonding layer can be formed of a metal or metal alloy, or a thermoplastic polymer that is removable. For example, the bonding layer can include indium, tin or a thermoplastic polymer such as polyethylene or polypropylene. In one embodiment, the bonding layer can be conductive. For example, where the bonding layer undergoes a phase change from solid to liquid in response to a change in temperature, a portion of the bonding layer may remain in the micro LED device during the take-up operation. In such an embodiment, it may be beneficial that the bonding layer is formed of a conductive material so that it does not adversely affect the micro LED device when it is subsequently transferred to a substrate receiver. In that case, the portion of the conductive bonding layer that remains on the micro LED device during transfer can assist in connecting the micro LED device to a conductive block on a substrate receiver. In a specific embodiment, the bonding layer can be formed of indium, which has a melting temperature of 156.7 ° C. The bonding layer can be laterally continuous through the substrate 201, or it can also be formed at laterally separate locations. For example, a location laterally separated from the bonding layer may have a width that is less or approximately the same width as the bottom surface of the p-n microdiode or metallization layer. In some embodiments, p-n microdiodes can optionally be formed at posts 202 on the substrate.
[0096] Welds can be suitable materials for the bonding layer 210 since many are generally ductile materials in their solid state and exhibit favorable humidification with metal and semiconductor surfaces. A typical alloy does not melt at a single temperature, but across a temperature range. Consequently, solder alloys are often characterized by a liquidus temperature which corresponds to the lowest temperature at which the alloy remains liquid, and a solidus temperature which corresponds to the highest temperature at which the alloy remains solid. An exemplary list of low melt solder materials that can be used with the modalities of the invention is provided in Table 2. Table 2.


[0097] An exemplary list of thermoplastic polymers that can be used with the modalities of the invention is provided in Table 3. Table 3.


[0098] Referring now to Figure 22, according to some modalities it is possible that an amount of bonding layer absorbed by capillary effect along the lateral surfaces of the metallization layer 220 and along the bottom surface 251 of the microdiode pn 250 during the manufacture of the pn 250 microdiodes arrangement on the carrier substrate 201. In this way, the shaped barricade layer 260 that occupies along the bottom surface 251 of the pn 250 microdiodes and the side surfaces of the metallization layers 220 can work as a physical barrier to protect side walls 253 and quantum well layer 216 from microdiodes pn 250 from contamination by bonding layer material 210 during subsequent temperature cycles (particularly at temperatures above the melting temperature or liquidus of the layer material 210) such as during the retrieval of the micro LED devices from the carrier substrate, and the release of of the micro LED devices on the receiving substrate.
[0099] Figures 23A to 23B include side and cross-sectional side view illustrations of a carrier substrate 201 and arrangement of micro LED devices according to an embodiment of the invention. In the particular embodiments illustrated, the arrangements are produced from micro LED devices of Example 19N which include the microdiode pn 250. However, it should be noted that Figures 23A to 23B must be exemplary, and that the arrangement of micro devices LED can be formed from any of the micro LED devices described above. In the embodiment illustrated in Figure 23A, each individual pn microdiode 250 is illustrated as a pair of concentric circles having different diameters and widths that correspond to the different widths of the bottom and top surfaces of the pn 250 microdiode, and the corresponding tapered side walls that occupy between bottom and top surfaces. In the embodiment illustrated in Figure 23B, each individual pn microdiode 250 is illustrated as a pair of concentric squares with rounded or tapered corners, with each square having a different width corresponding to the different widths of the bottom and top surfaces of the pn 250 microdiode , and the corresponding tapered side walls that occupy the bottom and top surfaces. However, the embodiments of the invention do not require tapered side walls, and the bottom and top surfaces of the microdiode p-n 250 can have the same diameter, or width, and vertical side walls. As shown in Figures 23A to 23B, the arrangement of micro LED devices is described as having a step (P), a spacing (S) between each micro LED device and a maximum width (W) of each micro LED device. For clarity and conciseness, only x dimensions are illustrated by the dotted lines in the top view illustration, although it is understood that similar y dimensions may exist, and may have the same or different dimensional values. In the particular embodiments illustrated in Figures 23A to 23B, the dimensional values x and y are identical in the top view illustration. In one embodiment, the arrangement of micro LED devices can have a pitch (P) of 10 μm, with each micro LED device having a spacing (S) of 2 μm and a maximum width (W) of 8 μm. In another embodiment, the arrangement of micro LED devices can have a pitch (P) of 5 μm, with each micro LED device having a spacing (S) of 2 μm and a maximum width (W) of 3 μm. However, the modalities of the invention are not limited to these specific dimensions, and any suitable dimension can be used.
[00100] Figure 24 is a flow chart illustrating a method of collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention. In operation 2410, a transfer head is positioned through a microdevice connected to a carrier substrate with a bonding layer. The transfer head can be any transfer head described in this document. The microdevice can be any of the micro LED device structures illustrated in Figures 19 to 21 and those described in Provisional Application in U.S. 61 / 561.706 and in Provisional Application in U.S. 61 / 594,919. Then, the microdevice is placed in contact with the transfer head in operation 2420. In one embodiment, the microdevice is placed in contact with the dielectric layer 120 of the transfer head. In an alternative embodiment, the transfer head is positioned through the microdevice with an adequate air gap that separates them that does not significantly affect the grip pressure, for example, 1 nm (0.001 μm) or 10 nm (0, 01 μm). In operation 2425, an operation is performed to create a phase change in the connecting layer 210 from solid to liquid. For example, the operation may include heating in In connection layer at or above the melting temperature of 156.7 ° C. In another embodiment, operation 2425 can be performed before operation 2420. In operation 2430, a voltage is applied to the electrode to create a grip pressure on the microdevice, and the microdevice and a substantial portion of the bonding layer 210 are collected with the transfer head in operation 2440. For example, approximately half of the connecting layer 210 can be collected with the microdevice. In an alternative embodiment, no part of the connecting layer 210 is collected with the transfer head. In operation 2445, the micro device and the connecting layer portion 210 are brought into contact with a receiving substrate. The microdevice and the connecting layer portion 210 are then released onto the receiving substrate in operation 2450. A variety of operations can be performed to control the phase of the connecting layer portion in collecting, transferring, contacting the receiving substrate and in releasing the microdevice and the connecting layer portion 210 on the receiving substrate. For example, the portion of the bonding layer that is collected with the microdevice can be kept in a liquid state during the contact operation 2445 and during the release operation 2450. In another embodiment, the portion of the bonding layer can be allowed to cool to a solid phase after being collected. For example, the portion of the bonding layer may be in a solid phase during the 2445 contact operation, and be fused back to the liquid state before or during the 2450 release operation. A variety of material and temperature phase cycles can be performed in accordance with embodiments of the invention.
[00101] Figure 25 is a flow chart illustrating a method of collecting and transferring an array of microdevices from a carrier substrate to at least one receiving substrate according to one embodiment of the invention. In operation 2510, an arrangement of transfer heads is positioned through an array of microdevices, each transfer head having a table structure, an electrode through the table structure and a dielectric layer that covers the electrode. In operation 2520, the array of microdevices is brought into contact with the array of transfer heads. In an alternative embodiment, the arrangement of transfer heads is positioned through the arrangement of micro-devices with an adequate air gap that separates them and that does not significantly affect the handle pressure, for example, 1 nm (0.001 μm) or 10 nm (0.01 μm). Figure 26 is a side view illustration of an array of microdevice transfer heads 100 in contact with an array of micro LED devices 200 according to an embodiment of the invention. As shown in Figure 26, the step (P) of the transfer head arrangement 100 corresponds to the step of the micro LED devices 200, the step (P) of the transfer head arrangement being the sum of the spacing (S) between the transfer heads and the width (W) of a transfer head.
[00102] In one embodiment, the micro LED device arrangement 200 has a 10 μm pitch, with each micro LED device having a spacing of 2 μm and a maximum width of 8 μm. In an exemplary embodiment, assuming a microdiode p-n 250 with straight side walls, the top surface of each micro LED device 200 is approximately 8 μm wide. In such an exemplary embodiment, the width of the top surface 121 of a corresponding transfer head 100 is approximately 8 µm or less in order to avoid inadvertent contact with an adjacent micro LED device. In another embodiment, the arrangement of micro LED devices 200 can have a pitch of 5 μm, with each micro LED device having a spacing of 2 μm and a maximum width of 3 μm. In an exemplary embodiment, the top surface of each 200 micro LED device is approximately 3 μm wide. In such an exemplary embodiment, the width of the top surface 121 of a corresponding transfer head 100 is approximately 3 μm or less in order to avoid inadvertent contact with an adjacent micro LED device 200. However, the embodiments of the invention are not limited to these specific dimensions, and can be of any suitable size.
[00103] Figure 27 is a side view illustration of an array of microdevice transfer heads in contact with an array of micro LED devices 200 according to an embodiment of the invention. In the embodiment illustrated in Figure 27, the step (P) of the transfer heads is an integer multiple of the step of the microdevice arrangement. In the particular mode illustrated, the step (P) of the transfer heads is 3 times the step of the arrangement of micro LED devices. In such an embodiment, having a larger transfer head pitch can protect against arching between the transfer heads.
[00104] Referring again to Figure 25, in operation 2530, a selective voltage is applied to a portion of the transfer head arrangement 100. Consequently, each transfer head 100 can be operated independently. In operation 2540, a corresponding portion of the microdevice arrangement is collected with the portion of the transfer head arrangement to which the voltage has been selectively applied. In one embodiment, selectively applying a voltage to a portion of the transfer head arrangement means applying a voltage to each transfer head in the transfer head arrangement. Figure 28 is a side view illustration of each transfer head in an array of microdevice transfer heads that collect an array of micro LED devices 200 according to an embodiment of the invention. In another embodiment, selectively applying a voltage to a portion of the transfer head arrangement means applying one less voltage than each transfer head (e.g., a subset of transfer heads) to the transfer head arrangement. Figure 29 is a side view illustration of a subset of the microdevice transfer head arrangement that collects a portion of a micro LED device arrangement 200 according to an embodiment of the invention. In a particular embodiment illustrated in Figures 28 to 29, the collection operation includes collecting the microdiode pn 250, the metallization layer 220 and a portion of the shaped electrical barrier layer 260 for the micro LED device 200. In one embodiment In particular illustrated in Figures 28 to 29, the collection operation includes collecting a substantial portion of the connecting layer 210. Accordingly, any of the modalities described in relation to Figures 25 to 31 can also be followed by controlling the temperature of the portion of the connection layer 210 as described and with reference to Figure 24. For example, the embodiments described in connection with Figures 25 to 31 may include performing an operation to create a phase change from solid to liquid in a plurality of locations on the connection layer which connects the microdevice array to the carrier substrate 201 before collecting the microdevice array. In one embodiment, the plurality of link layer locations can be regions of the same link layer. In one embodiment, the plurality of locations in the bonding layer can be locations laterally separated from the bonding layer.
[00105] In operation 2550, the microdevice array portion is then released on at least one receiving substrate. Consequently, the array of micro LEDs can be released completely on a single receiving substrate, or selectively released on multiple substrates. For example, the receiving substrate may be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or ICs, or a substrate with metal distribution lines. The release can be accomplished by affecting the applied voltage in any of the ways described in relation to Figures 16 to 18.
[00106] Figure 30 is a side view illustration of an array of microdevice transfer heads that retain a corresponding array of micro LED devices 200 through a receiving substrate 301 that includes a plurality of driver contacts 310 Then, the micro LED device array 200 can be brought into contact with the receiving substrate and then selectively released. Figure 31 is a side view illustration of a single micro LED device 200 selectively released on the receiving substrate 301 through a trigger contact 310 according to an embodiment of the invention. In another embodiment, more than one micro LED device 200 is released, or the entire array of micro LED devices 200 is released.
[00107] Figure 32 is a flow chart illustrating a method of collecting and transferring a microdevice from a carrier substrate to a receiving substrate according to an embodiment of the invention. For the sake of clarity, Figure 32 is described in relation to various structural configurations illustrated in Figures 33A to 35B, although the modalities of the invention are not so limited and can be practiced with other structural configurations referred to in this document. In operation 3210, a carrier substrate carrying a microdevice connected to a bonding layer is optionally heated to a temperature below the liquidus temperature of the bonding layer. In one embodiment, the carrier substrate is heated to a temperature of 1 ° C to 10 ° C below a liquidus temperature of the bonding layer, although lower or higher temperatures can be used. The heat from the carrier substrate can be transferred from the carrier substrate to the bonding layer, to also maintain the bonding layer at approximately the same temperature. In operation 3220, a transfer head is heated to a temperature above the temperature of the bonding layer. For example, the transfer head can be heated to a temperature of 1 ° C to 150 ° C and, more specifically, 1 ° C to 50 ° C, above the liquidus temperature of the bonding layer, although higher temperatures can be used. Then, the microdevice is placed in contact with the transfer head in operation 3225, and heat is transferred from the transfer head 100 to connection layer 210 to at least partially melt the connection layer in operation 3230. Alternatively, the The microdevice can be placed in contact with the transfer head in operation 3225, followed by heating the transfer head to a temperature above the liquid temperature of the bonding layer in operation 3220 so that the heat is transferred from transfer head 100 to the bonding layer 210 to at least partially merge the bonding layer in operation 3230. Accordingly, it should be understood that the order of operations in the flowcharts illustrated in Figure 32 and in Figure 36 can be carried out in different orders than sequentially numbered operations . In one embodiment, the transfer head and carrier substrate are heated to temperatures so that a sufficient portion of the bonding layer fuses quickly upon contact with the microdevice with the transfer head which is heated above the liquidus temperature so that the microdevice can be retracted by the transfer head by creating a grip force that overcomes the surface tension forces that retain the microdevice to the carrier substrate. The size of the microdevice, the pick-up speed and the thermal conductivity of the system are factors in determining temperatures.
[00108] Figure 33A is a side view illustration of a location at least partially fused 215 of a laterally continuous connection layer directly below the micro LED device 200 according to an embodiment of the invention. As shown, area 211 at location 215 of bonding layer 210 located directly below microdevice 200 is illustrated with a darker shading indicating that area 211 is in the liquid state, while the lighter shaded portions 213 of bonding layer 210 are in the solid state. In the particular embodiment illustrated in Figure 33A, the localized fusion of the area 211 of the connection layer 210 can be carried out by separately heating the substrate 201 that carries the microdevice 200, and the transfer head assembly that carries the transfer head 100. For example, the substrate 201 can be heated globally with an optional heating element 402 (indicated by the dotted lines) and the heat distribution plate 400 at a temperature of 1 ° C to 10 ° C below a temperature liquidus of the connection layer, and the transfer head can be heated with a heating element 502 and the heat distribution plate 500 to a temperature of 1 ° C to 150 ° C and, more specifically, 1 ° C to 150 ° C, above the liquidus temperature of the bonding layer. Heat can be applied in other ways, such as IR heat lamps, lasers, resistive heating elements, among others. Substrate 201 can also be heated locally.
[00109] Figure 33B is a side view illustration of at least partially fused locations of a laterally continuous bonding layer directly below the micro LED device 200 according to an embodiment of the invention. As illustrated, the location of the bonding layer 210 located directly below the microdevice 200 is illustrated with a darker shading indicating that area 211 is in the liquid state. In the particular embodiment shown in Figure 33B, substantially the entire side bonding layer 210 is in liquid state 211, which can be accomplished by globally heating substrate 201 carrying micro-device 200 at or above liquidus temperature of the connecting layer 210, for example, with the heating element 402 and the heat distribution plate 400, without requiring separate heating of the transfer head 100.
[00110] Figure 34A is a side view illustration of a laterally at least partially fused location 215 of a connection layer directly below the micro LED device 200 according to another embodiment of the invention. As shown, locations 215 of the connecting layer 210 directly below the micro-devices 200 are laterally separated locations, with the laterally separated location 215 of the connecting layer located directly below the microdevice 200 which is in contact with the transfer head 100 by less partially fused, indicated by the shading of area 211. Similar to Figure 33A, the localized fusion of area 211 of the side laterally separated from the bonding layer 210 can be performed by separately heating substrate 201 that carries microdevice 200, and the assembly transfer head carrying transfer head 100. Heating element 402 can be optional for localized heating, indicated by dotted lines. The carrier substrate 201 can also be heated locally.
[00111] Figure 34B is a side view illustration of at least partially fused separate locations of a bonding layer according to an embodiment of the invention. As shown, the laterally separated locations 215 of the connecting layer 210 located below the microdevices 200 are illustrated with a darker shade which indicates that the areas 211 are in the liquid state. In the particular embodiment illustrated in Figure 34B, substantially all of the laterally separated site 215 of the bonding layer 210 is melted, which can be accomplished by globally heating the substrate 201 that carries the microdevices 200 at or above the liquid temperature. connection layer 210, for example, with the heating element 402 and the heat distribution plate 400, without requiring separate heating of the transfer head 100.
[00112] Figure 35A is a side view illustration of a laterally at least partially fused location 215 of a connection layer at a station 202 according to an embodiment of the invention. As shown, locations 215 of the connecting layer 210 located below the microdevices 200 are laterally separated locations, with the laterally separated location 215 of the connecting layer located below the microdevice 200 in contact with the transfer head 100 at least partially fused, indicated by shading area 211. Similar to Figure 33A, the localized fusion of area 211 of the laterally separated site 215 of the bonding layer 210 can be performed by separately heating the substrate 201 carrying the microdevice 200, and the transfer head assembly which carries the transfer head 100. The heating element 402 can be optional for the localized heating, indicated by the dotted lines. The carrier substrate 201 can also be heated locally.
[00113] Figure 35B is a side view illustration of at least partially fused locations 215 of a connection layer at posts 202 according to an embodiment of the invention. As shown, the laterally separated locations of the connecting layer 210 located below the microdevices 200 are illustrated with a darker shading indicating that areas 211 are in the liquid state. In the particular embodiment illustrated in Figure 35B, each side laterally separated 215 of the bonding layer 210 is melted, which can be accomplished by globally heating the substrate 201 that carries the microdevices 200 at liquidus temperature or above the same as the bonding layer 210 , for example, with the heating element 402 and the heat distribution plate 400, without requiring separate heating of the transfer head 100.
[00114] Referring again to Figure 32, a voltage is applied to the electrode (s) 116 in the transfer head 100 to create a grip pressure on the microdevice 200 in operation 3240, and in operation 3250, the microdevice is collected with the transfer head. As described above, the order of operations in the flowcharts illustrated in Figure 32 and Figure 36 can be performed in different orders than sequentially numbered operations. For example, the 3240 operation of applying a voltage to the transfer head to create a grip pressure on the microdevice can be performed previously in the sequence of operations. In one embodiment, a substantial portion of the connecting layer 210 is collected with the transfer head 100 in operation 3245. For example, approximately half of the connecting layer 210 can be collected with the microdevice 200. In an alternative embodiment, no part of the connection layer 210 is collected with the transfer head. In one embodiment, a portion of the shaped barricade layer 260 is collected with the microdevice 200. For example, a portion of the shaped dielectric barrier layer that occupies the side walls 253 and a portion of the bottom surface 251 of the microdevice is collected with the microdevice. The shaped dielectric barrier layer portion that occupies the side walls 253 can cover a quantum well layer 216 of the microdevice. In operation 3250, the microdevice and, optionally, a portion of the connecting layer 210 and the shaped dielectric barrier layer 260 are brought into contact with a receiving substrate. The microdevice and, optionally, a portion of the connecting layer 210 and the shaped dielectric barrier layer 260 are then released onto the receiving substrate in operation 3260.
[00115] Referring again to Figures 33A to 35B, in the particular embodiment illustrated, the bottom surface of the microdiode pn 250 is wider than the top surface of the metallization layer 220, and the shaped dielectric barrier layer 260 occupies the side walls of the microdiode pn 250, a portion of the bottom surface of the microdiode pn 250 and the side walls of the plating layer 220. In one aspect, the portion of the shaped dielectric barrier layer 260 that wraps under the microdiode pn 250 protects the shaped dielectric barrier layer 260 on the side walls of the microdiode pn 250 from scraping or breaking during the pickup operation with the transfer head 100. Stress points can be created in the shaped dielectric barrier layer 260 adjacent to the metallization layer 220 or to the connecting layer 210, particularly at corners and places with sharp angles. Upon contact of the micro LED device with the transfer head 100 and / or the creation of the phase change in the connection layer, these voltage points become natural break points in the shaped dielectric barrier layer 260 in which the dielectric layer conformed can be cleaved. In one embodiment, the shaped dielectric barrier layer 260 is cleaved at the natural break points after contact of the micro LED device with the transfer head and / or after the creation of the phase change in the connection layer, which can be before or during the collection of the microdiode pn and the metallization layer. In the liquid state, the connection layer 210 can soften through the underlying structure in response to compressive forces associated with the contact of the micro LED device with the transfer head 100. In one embodiment, after contact of the micro LED device with the transfer head, the transfer head is rubbed across a top surface of the micro LED device before the phase change is created in the bonding layer. The scrub can dislodge any particles that may be present on the contact surface of the transfer head or the micro LED device. The scrub can also transfer pressure to the shaped dielectric barrier layer. Consequently, both the transfer of a pressure from the transfer head 100 to the shaped dielectric barrier layer 260 and the heating of the bonding layer above a temperature of the bonding layer can contribute to the cleavage of the shaped dielectric barrier layer 260 in a place under the microdiode pn 250 and can preserve the integrity of the micro LED device and the quantum well layer. In one embodiment, the bottom surface of the microdiode pn 250 is wider than the top surface of the metallization layer 220 insofar as there is space for the shaped dielectric barrier layer 260 to be formed on the bottom surface of the microdiode pn 250 and create break points, although this distance can also be determined by lithographic tolerances. In one embodiment, a distance of 0.25 μm to μm on each side of the pn 250 microdiode accommodates a conformed 5.0x10—9 meter to 6.0x10— 8 meter dielectric barrier layer (50 angstrom to 600 angstrom) 260 .
[00116] A variety of operations can be performed to control the phase of the bonding layer portion in the collection, transfer, contact of the receiving substrate, and in the release of the microdisplay and the bonding layer portion 210 on the receiving substrate. For example, the portion of the bonding layer that is collected with the microdevice can be kept in a liquid state during the 3250 contact operation and during the 3260 release operation. In another embodiment, the portion of the bonding layer can be allowed to cool to a solid phase after being collected. For example, the bonding layer portion may be in a solid phase during the 3250 contact operation, and fused back to the liquid state before or during the 3260 release operation. A variety of material and temperature phase cycles it can be carried out according to embodiments of the invention.
[00117] An exemplary embodiment that illustrates the phase control of the portion of the bonding layer in collecting, transferring, contacting the receiving substrate, and in releasing the microdevice of Figure 33A is described in further detail in the following method illustrated in Figure 36 and the structural configurations illustrated in Figures 37 to 40, although the modalities of the invention are not so limited and can be practiced with other structural configurations. In operation 3610, a substrate carrying an array of microdevices connected to a plurality of locations in a bonding layer is optionally heated to a temperature below a liquidus temperature of the bonding layer. The heat from the carrier substrate can be transferred from the carrier substrate to the bonding layer, to also maintain the bonding layer at approximately the same temperature. In operation 3620, a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Then, the microdevice arrangement is brought into contact with the arrangement of transfer heads in operation 3625, and heat is transferred from the arrangement of transfer heads 100 to the plurality of locations of the connecting layer 210 to melt at least partially portions of the plurality of locations of the bonding layer in operation 3630. Alternatively, the array of microdevices can be brought into contact with the arrangement of transfer heads in operation 3625, followed by heating the arrangement of transfer heads to the temperature above liquidus temperature of the connection layer in operation 3620 so that heat is transferred from the transfer head arrangement 100 to the plurality of locations in the connection layer 210 to at least partially fuse the portions of the plurality of locations in the connection layer in the operation 3630. Accordingly, it should be understood that the order of operations in the flowcharts illustrated in Figure 32 and Figure 3 6 can be performed in different orders from sequentially numbered operations.
[00118] Figure 37 is a side view illustration of an array of microdevice transfer heads in contact with an array of micro LED devices of Figure 33A, wherein the plurality of locations of the link layer is at least partially fused , indicated by the dark shaded areas 211, according to an embodiment of the invention. In the particular embodiment illustrated in Figure 37, the localized fusion of areas 211 of the connecting layer 210 can be carried out by separately heating the carrier substrate 201 that carries the microdevices 200, and the arrangement of transfer heads 100. For example, the carrier substrate 201 can be heated with a heating element 402 and the heat distribution plate 400 to a temperature 1 ° C to 10 ° C below a liquidus temperature of the connection layer, and the base transfer head arrangement 100 can be heated with a heating element 502 and the heat distribution plate 500 to a temperature of 1 ° C to 150 ° C and, more specifically, 1 ° C to 150 ° C, above the liquidus temperature of the connection layer as described in relation to Figure 33A. Heat can be applied in other ways, such as IR heat lamps, lasers, resistive heating elements, among others. The carrier substrate 201 can also be heated locally.
[00119] Referring again to Figure 36, then a voltage is selectively applied to electrode (s) 116 in a portion of the transfer head arrangement 100 to create a handle pressure on the corresponding array of microdevices 200 in operation 3640 and, in operation 3645, the corresponding portion of the microdevice arrangement 200 is collapsed with the portion of the transfer head arrangement 100. As described above, the order of operations in the flowcharts illustrated in Figure 32 and Figure 36 can be carried out in orders other than sequentially numbered operations. For example, the operation 3640 of applying a voltage to the transfer head to create a grip pressure on the microdevice can be performed previously in the sequence of operations. In one embodiment, a substantial portion of the plurality of link layer 210 locations is collected with the microdevice arrangement 200 in operation 3645. For example, approximately half of the plurality of link layer 210 locations can be collected with the microdevice arrangement. 200. In an alternative embodiment, no part of the connecting layer 210 is collected with the microdevice arrangement 200. In one embodiment, a portion of the shaped dielectric barrier layer 260 is collected with the microdevices 200. For example, a portion of the layer a shaped dielectric barrier that occupies the side walls 253 and a portion of the bottom surfaces 251 of the microdevices is collected with the microdevices. The portion of the shaped dielectric barrier layer that occupies the side walls 253 can cover a layer of quantum well 216 in each of the microdevices. Figure 38 is a side view illustration of an array of microdevice transfer heads 100 that collects an array of micro LED devices 200 according to an embodiment of the invention, characterized by the fact that a substantial portion of the plurality of the bonding layer is collected in liquid state 211 together with the array of micro LED devices 200.
[00120] In operation 3650, the corresponding portion of the microdevice arrangement 200 and, optionally, the portion of the connecting layer 210 and the portion of the shaped dielectric barrier layer 260 that have been collected are brought into contact with a receiving substrate. The bonding layer 210 can be in the solid state 213 or in the liquid state 211 at the substrate contact. The portion of the microdevice arrangement and, optionally, the portion of the connecting layer 210 and the portion of the shaped dielectric barrier layer 260 are then selectively released on at least one receiving substrate in operation 3660. Consequently, the arrangement of microdevices can be released completely on a single receiving substrate, or selectively released on multiple substrates. The receiving substrate can be, but is not limited to, a display substrate, a lighting substrate, a substrate with functional devices such as transistors or ICs, or a substrate with metal distribution lines. The release can be accomplished by turning off the voltage source, grounding the voltage source, or reversing the polarity of the constant voltage.
[00121] Figure 39 is a side view illustration of an array of microdevice transfer heads with an array of micro LED devices positioned through a receiving substrate 301 that includes a plurality of trigger contacts 310 according to a embodiment of the invention, in which the portions of the bonding layer that have been collected are in liquid state 211. Figure 40 is a side view illustration of an arrangement of micro LED devices selectively released on the receiving substrate 301 through of the trigger contacts 310 according to an embodiment of the invention. In another embodiment, a single micro LED device 200 or a portion of the micro LED devices 200 is released. Upon release of the microdevices 200 on the receiving substrate 301, the corresponding portions of the bonding layer are allowed to cool to solid state 213.
[00122] In one embodiment, the receiving substrate 301 can be heated to a temperature above or below the liquidus temperature of the bonding layer 210 to aid in the transfer process. The receiving substrate 301 can also be heated locally or globally. In one embodiment, the receiving substrate is heated globally with a heating element 602 and the heat distribution plate 600 similar to the carrier substrate. Heat can be applied in other ways, such as IR heat lamps, lasers, resistive heating elements, among others. In one embodiment, a localized laser can be provided above a top surface of the receiving substrate 301 to provide localized heating for the bonding layer or for the receiving substrate. In another embodiment, a localized laser can be provided below a bottom surface of the receiving substrate 301, so that the bonding layer or the receiving substrate is heated locally from the rear. Where localized heating of the receiving substrate 301 is used, for example, by laser, temperatures below or above the liquid temperature of the bonding layer can be carried out. For example, a local region of receiving substrate 301 adjacent to contact 310 can be heated locally to or above the liquidus temperature of the bonding layer to facilitate bonding, followed by cooling to solidify the bond. Likewise, the receiving substrate 301 can be maintained locally or globally at an elevated temperature below the liquidus temperature of the bonding layer, or allowed to remain at room temperature.
[00123] A variety of operations can be performed to control the phase of the bonding layer portion in collecting, transferring, contacting the receiving substrate and in releasing the microdevices and the bonding layer portion 210 in the receiving substrate. For example, the portion of the bonding layer that is collected with the microdevice can be kept in a liquid state during contact operation 3650 and during release operation 3660. In another embodiment, the portion of the bonding layer can be allowed to cool to a solid phase after being collected. For example, the bonding layer portion may be in a solid phase during the 3650 contact operation, and fused back to the liquid state before or during the 3660 release operation. A variety of material and temperature phase cycles can be performed according to the modalities of the invention.
[00124] In the use of the various aspects of this invention, it may become evident to an individual skilled in the art that combinations or variations of the above modalities are possible for the formation of a microdevice transfer head and head arrangement, and for the transfer of a microdevice and microdevice arrangement. Although the present invention has been described in a lineage specific to structural resources and / or methodological acts, it should be understood that the invention defined in the appended claims is not necessarily limited to the specific acts or resources described. The specific acts and remedies disclosed are to be understood, instead, as particularly thoughtful implementations of the claimed invention useful for the illustration of the present invention.

权利要求:
Claims (20)
[0001]
1. Transfer head assembly (100) characterized by the fact that it comprises: a heater assembly (500, 502); and a base substrate (102) that supports an electrostatic transfer head arrangement (100); wherein each electrostatic transfer head (100) comprises a table structure (104) with a scale of 1 to 100 μm in both x and y dimensions, and the heater assembly (500, 502) is configured to heat each transfer head (100) electrostatic at a temperature above 156.7 ° C.
[0002]
2. Transfer head assembly (100) according to claim 1, characterized in that the heater assembly (500, 502) comprises a heating element (502) and a heat distribution plate (500) .
[0003]
3. Transfer head assembly (100) according to claim 1, characterized in that it additionally comprises a dielectric layer (120) covering the table structure (104) of each electrostatic transfer head (100).
[0004]
4. Transfer head assembly (100), according to claim 1, characterized by the fact that each electrostatic transfer head (100) incorporates a monopolar electrode configuration.
[0005]
5. Transfer head assembly (100) according to claim 1, characterized by the fact that each electrostatic transfer head (100) incorporates a bipolar electrode configuration.
[0006]
6. Transfer head assembly (100), according to claim 3, characterized by the fact that each table structure (104) is integrally formed to the base substrate (102).
[0007]
7. Transfer head assembly (100), according to claim 3, characterized by the fact that the electric layer (120) is 0.5 to 2.0 μm thick.
[0008]
8. Transfer head assembly (100) according to claim 3, characterized by the fact that each table structure (104) is 1 to 5 μm thick.
[0009]
9. Transfer head assembly (100) according to claim 1, characterized by the fact that each electrostatic transfer head (100) is configured to apply a separate electrostatic handle pressure to a separate microdevice with a scale of 1 to 100 μm.
[0010]
10. Transfer head assembly (100) according to claim 5, characterized by the fact that each electrostatic transfer head (100) comprises a pair of table structures (104), with each table structure (104 ) has a scale from 1 to 100 μm in both x and y dimensions.
[0011]
11. Transfer head assembly (100) according to claim 10, characterized by the fact that each table structure (104) is integrally formed to the base substrate (102).
[0012]
12. Transfer head assembly (100) according to claim 11, characterized in that each table structure (104) and the base substrate (102) comprise silicon.
[0013]
13. Transfer head assembly (100) according to claim 12, characterized in that it additionally comprises a dielectric layer (120) covering the pair of table structures (104) of each transfer head (100) electrostatic.
[0014]
14. Transfer tool characterized by the fact that it comprises: a transfer head assembly (100) which comprises: a heater assembly (500, 502); and a base substrate (102) that supports an electrostatic transfer head arrangement (100); wherein each electrostatic transfer head (100) comprises a table structure (104) with a scale of 1 to 100 μm in both x and y dimensions, and the heater assembly (500, 502) is configured to heat each transfer head ( 100) electrostatic at a temperature above 156.7 ° C; and a heater assembly (500, 502) of substrate charger (201).
[0015]
15. Transfer tool according to claim 14, characterized by the fact that the heater assembly (500, 502) of the carrier substrate (201) is configured to heat a carrier substrate (201) to 146.7 ° C.
[0016]
16. Transfer tool according to claim 14, characterized by the fact that the heater assembly (500, 502) of the carrier substrate (201) is configured to heat a carrier substrate (201) to 349 ° C.
[0017]
17. Transfer tool according to claim 14, characterized in that the heater assembly (500, 502) of the carrier substrate (201) comprises a carrier substrate heating element (402) and a heat distribution plate carrier substrate (400).
[0018]
18. Transfer tool, according to claim 14, characterized by the fact that it additionally comprises a receiving substrate heater assembly (600, 602).
[0019]
19. Transfer tool according to claim 18, characterized by the fact that the receiving substrate heater assembly (600, 602) is configured to heat a receiving substrate (301) to 146.7 ° C.
[0020]
20. Transfer tool according to claim 18, characterized in that the receiving substrate heater assembly (600, 602) is configured to heat a receiving substrate (301) to 349 ° C.

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法律状态:
2018-04-10| B25A| Requested transfer of rights approved|Owner name: APPLE INC. (US) |

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2018-12-04| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|

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2019-11-26| B06U| Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]|

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2020-10-13| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|

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2020-12-15| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 08/11/2012, OBSERVADAS AS CONDICOES LEGAIS. |

优先权:

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申请号 | 申请日 | 专利标题

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US201161561706P| true| 2011-11-18|2011-11-18|

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US61/561,706|2011-11-18|

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US201261594919P| true| 2012-02-03|2012-02-03|

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US61/594,919|2012-02-03|

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US201261597109P| true| 2012-02-09|2012-02-09|

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US61/597,109|2012-02-09|

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US201261597658P| true| 2012-02-10|2012-02-10|

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US61/597,658|2012-02-10|

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US13/372,422|US8349116B1|2011-11-18|2012-02-13|Micro device transfer head heater assembly and method of transferring a micro device|

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US13/372,422|2012-02-13|

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PCT/US2012/064221|WO2013074373A1|2011-11-18|2012-11-08|Micro device transfer head heater assembly and method of transferring a micro device|

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